N-channel enhancement-mode power MOSFET uses trench technology for low on-resistance and low gate charge. The device is rated for 100 V drain-source voltage, 130 A continuous drain current, and 285 W maximum power dissipation at 25 °C. On-resistance is specified at 5.2 mΩ typical and 6.8 mΩ maximum with a 10 V gate drive. The TO-263T-2L package supports power switching, hard-switching, high-frequency circuits, and uninterruptible power supply applications. The product is marked Pb Free and is specified for -55 °C to 175 °C junction and storage temperature operation.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NCE Power NCE01H13WD datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Device type | N-channel enhancement-mode power MOSFET |
| Drain-source voltage | 100V |
| Continuous drain current | 130A |
| Continuous drain current at Tc=100°C | 92A |
| Pulsed drain current | 500A |
| Maximum power dissipation | 285W |
| Derating factor | 1.9W/°C |
| Single pulse avalanche energy | 1100mJ |
| Operating junction and storage temperature | -55 to 175°C |
| Thermal resistance junction-to-case | 0.53°C/W |
| Drain-source on-state resistance | 5.2 typ, 6.8 max at VGS=10V, ID=20AmΩ |
| Gate threshold voltage | 2 min, 3.0 typ, 4 maxV |
| Input capacitance | 7180 typpF |
| Output capacitance | 2800 typpF |
| Reverse transfer capacitance | 695 typpF |
| Total gate charge | 105 typnC |
| Gate-source charge | 35 typnC |
| Gate-drain charge | 23 typnC |
| Pb Free | Yes |
Download the complete datasheet for NCE Power NCE01H13WD to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
