N-channel enhancement-mode MOSFET uses a TO-220 through-hole package for power switching applications. The device is rated for an 80 V drain-source breakdown voltage and 94 A continuous drain current at 25 °C case temperature. On-resistance is specified at 5.5 mΩ maximum with a 10 V gate drive and 20 A drain current. The junction and storage temperature range is -55 °C to 150 °C. The package is identified as halogen-free and lead-free.
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| Transistor Type | N-channel enhancement mode MOSFET |
| Drain-Source Breakdown Voltage | 80V |
| Gate-Source Voltage | ±25V |
| Continuous Drain Current at 25 °C Case | 94A |
| Continuous Drain Current at 100 °C Case | 60A |
| Pulsed Drain Current | 270A |
| Drain-Source On-Resistance at 10 V Gate | 5.5 maxmΩ |
| Drain-Source On-Resistance at 7 V Gate | 7 maxmΩ |
| Gate Threshold Voltage | 2 min, 3 typ, 4 maxV |
| Power Dissipation at 25 °C Case | 113W |
| Operating Junction and Storage Temperature | -55 to 150°C |
| Junction-to-Case Thermal Resistance | 1.1 max°C/W |
| Junction-to-Ambient Thermal Resistance | 62.5 max°C/W |
| Input Capacitance | 3876 typpF |
| Output Capacitance | 851 typpF |
| Reverse Transfer Capacitance | 333 typpF |
| Total Gate Charge at 10 V Gate | 80 typnC |
| Forward Transconductance | 66 typS |
| Source-Drain Diode Forward Voltage | 1.4 maxV |
| Package | TO-220 |
| Lead-free | Yes |
| Halogen-free | Yes |
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