The NTE Electronics BS170 is a TO-92-3 packaged N-channel enhancement MOSFET with a continuous drain current of 300mA and a drain to source breakdown voltage of 60V. It can handle a maximum power dissipation of 830mW and has a maximum on-resistance of 5 ohms. The device is lead-free and compliant with Reach SVHC regulations. It is available in tape and reel packaging for easy mounting in through-hole applications.
PackageTO-92-3
Current Rating500mA
MountingThrough Hole
Power830mW
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Technical Specifications
NTE Electronics BS170 technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 300mA |
| Current Rating | 500mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 60pF |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Packaging | Tape and Reel |
| Power Dissipation | 830mW |
| Rds On Max | 5R |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics BS170 Datasheet
Download the complete datasheet for NTE Electronics BS170 to view detailed technical specifications.
No datasheet is available for this part.