N-channel MOSFET for high-frequency applications, operating up to 108 MHz with a maximum output power of 30W. Features a drain-to-source voltage rating of 125V and a continuous drain current of 4A. Offers a typical gain of 20dB and a low drain-to-source resistance of 1.5 Ohms. Designed for surface mount applications with a maximum power dissipation of 68W and a wide operating temperature range from -65°C to 200°C.
Frequency108MHz
Voltage Rating125V
Current Rating4A
MountingSurface Mount, Screw
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Technical Specifications
NXP BLF175,112 technical specifications.
General
Continuous Drain Current (ID)
4A
Current Rating
4A
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
125V
DS Breakdown Voltage-Min
125V
Frequency
108MHz
Gain
20dB
Gate to Source Voltage (Vgs)
20V
Height
7.47mm
Input Capacitance
130pF
Lead Free
Lead Free
Length
24.87mm
Max Frequency
108MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
30W
Max Power Dissipation
68W
Mount
Surface Mount, Screw
Number of Elements
1
Operating Frequency
108 MHz
Output Power
30W
Package Quantity
20
Packaging
Rail/Tube
Polarity
N-CHANNEL
RoHS Compliant
Yes
Test Voltage
50V
Voltage Rating
125V
Width
9.73mm
Compliance
RoHS
Compliant
Datasheet
NXP BLF175,112 Datasheet
Download the complete datasheet for NXP BLF175,112 to view detailed technical specifications.
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