N-channel TrenchMOS standard level FET, SOT-96-1 package. Features 150V drain-to-source breakdown voltage and 5A continuous drain current. Offers low 75mΩ drain-to-source resistance and 1.15nF input capacitance. Operates from -55°C to 150°C with a maximum power dissipation of 6.25W. Includes fast switching times with 12ns turn-on and 18ns fall times.
PackageSOT-96-1
PolarityN-CHANNEL
Power6.25W
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Technical Specifications
NXP PHK5NQ15T,518 technical specifications.
General
Package/Case
SOT-96-1
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
150V
Drain to Source Resistance
75mR
Drain to Source Voltage (Vdss)
150V
Fall Time
18ns
Gate to Source Voltage (Vgs)
20V
Height
1.45mm
Input Capacitance
1.15nF
Length
5mm
Max Dual Supply Voltage
150V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
6.25W
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
6.25W
Radiation Hardening
No
Rds On Max
75mR
RoHS Compliant
Yes
Series
TrenchMOS™
Turn-Off Delay Time
35ns
Turn-On Delay Time
12ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
NXP PHK5NQ15T,518 Datasheet
Download the complete datasheet for NXP PHK5NQ15T,518 to view detailed technical specifications.
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