PNP Epitaxial Silicon Transistor for through-hole mounting in a TO-92 package. Features a maximum collector current of 50mA and a collector-emitter voltage of 120V. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C with a power dissipation of 500mW. RoHS compliant and lead-free.
Frequency100MHz
PackageTO-92
Current Rating-50mA
MountingThrough Hole
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Technical Specifications
Onsemi KSA992FBU technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
-120V
Collector Emitter Breakdown Voltage
120V
Collector Emitter Saturation Voltage
-90mV
Collector Emitter Voltage (VCEO)
120V
Collector-emitter Voltage-Max
300mV
Current Rating
-50mA
Emitter Base Voltage (VEBO)
-5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
4.58mm
hFE Min
200
Lead Free
Lead Free
Length
4.58mm
Max Collector Current
50mA
Max Frequency
1MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
PNP
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-120V
Weight
0.179g
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi KSA992FBU Datasheet
Download the complete datasheet for Onsemi KSA992FBU to view detailed technical specifications.
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