N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 2.6A continuous drain current. This single-element MOSFET offers a maximum drain-source on-resistance of 3.6 Ohms and a nominal gate-source voltage of 4.5V. Designed for surface mount applications in a DPAK package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 61W. Key switching characteristics include a 9ns turn-on delay and a 10ns fall time.
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| Package/Case | DPAK |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 3.3R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 3.6R |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.38mm |
| Input Capacitance | 312pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 61W |
| Nominal Vgs | 4.5V |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 61W |
| Radiation Hardening | No |
| Rds On Max | 3.6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 9ns |
| Width | 6.22mm |
| RoHS | Compliant |
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Onsemi product discontinuance notice (PD21859X) for specific MOSFETs due to chip supplier wafer technology exit. Last time buy: Dec 15, 2017.
