N-channel power MOSFET in a compact SO-8FL package with 30 V drain-to-source rating. The device provides up to 303 A continuous drain current at case temperature of 25 °C and features very low on-resistance of 0.9 mΩ at 10 V gate drive and 1.2 mΩ at 4.5 V gate drive. Maximum gate-to-source voltage is ±20 V, and operating junction temperature ranges from -55 °C to 150 °C. The datasheet specifies low gate charge and capacitance for reduced driver losses, with total gate charge of 63 nC at 4.5 V and 139 nC at 10 V. The device is specified as Pb-free, halogen-free/BFR-free, and RoHS compliant.
Checking distributor stock and pricing after the page loads.
| Transistor Type | N-Channel MOSFET |
| Drain-to-Source Voltage | 30V |
| Gate-to-Source Voltage | ±20V |
| Continuous Drain Current (TC=25°C) | 303A |
| Continuous Drain Current (TA=25°C) | 47A |
| Pulsed Drain Current | 552A |
| Drain-to-Source On Resistance @ VGS=10V | 0.9mΩ |
| Drain-to-Source On Resistance @ VGS=4.5V | 1.2mΩ |
| Power Dissipation (TC=25°C) | 134W |
| Avalanche Energy | 862mJ |
| Input Capacitance | 10144pF |
| Total Gate Charge @ VGS=4.5V | 63nC |
| Total Gate Charge @ VGS=10V | 139nC |
| Reverse Recovery Time | 87ns |
| Junction-to-Case Thermal Resistance | 0.93°C/W |
| Operating Junction Temperature Range | -55 to 150°C |
| Package | SO-8FL |
| RoHS | Compliant |
| Pb-free | Yes |
| Halogen Free/bfr Free | Yes |
