Single N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 11A continuous drain current. Offers a low 11.5mΩ drain-source on-resistance at a logic level gate drive. Designed with a 3.3x3.3mm WDFN8 package, this component operates from -55°C to 175°C with a maximum power dissipation of 21W. Includes fast switching characteristics with turn-on delay of 10ns and fall time of 22ns. Halogen and lead-free, RoHS compliant, and supplied on tape and reel.
PolarityN-CHANNEL
Power21W
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Technical Specifications
Onsemi NVTFS5820NLTWG technical specifications.
General
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 11.5mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 11.5MR |
| Element Configuration | Single |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 0.75mm |
| Input Capacitance | 1.462nF |
| Lead Free | Lead Free |
| Length | 3.15mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 21W |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 21W |
| Radiation Hardening | No |
| Rds On Max | 11.5mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 10ns |
| Width | 3.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVTFS5820NLTWG Datasheet
Download the complete datasheet for Onsemi NVTFS5820NLTWG to view detailed technical specifications.
No datasheet is available for this part.