PNP Bipolar Junction Transistor (BJT) in SOT-223 surface mount package. Features a maximum collector current of 4A and a collector-emitter breakdown voltage of 25V. Offers a minimum DC current gain (hFE) of 80 and a transition frequency of 75MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.2W. Supplied on tape and reel for automated assembly.
Frequency75MHz
PackageSOT-223
Current Rating-4A
MountingSurface Mount
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Technical Specifications
Onsemi NZT749 technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
-35V
Collector Emitter Breakdown Voltage
25V
Collector Emitter Voltage (VCEO)
25V
Collector-emitter Voltage-Max
300mV
Current Rating
-4A
Emitter Base Voltage (VEBO)
-5V
Frequency
75MHz
Gain Bandwidth Product
75MHz
hFE Min
80
Lead Free
Lead Free
Max Collector Current
4A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1.2W
Series
NZT749
Transition Frequency
75MHz
DC Rated Voltage
-25V
Weight
0.188g
Compliance
RoHS
Not Compliant
Datasheet
Onsemi NZT749 Datasheet
Download the complete datasheet for Onsemi NZT749 to view detailed technical specifications.
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