P-channel enhancement mode silicon power MOSFET, featuring a dual dual drain configuration. This surface-mount transistor operates with a maximum drain-source voltage of 12V and a continuous drain current of 4.8A. Housed in an 8-pin WMini8-F1 package with a 0.65mm pin pitch, it offers a low drain-source on-resistance of 32mOhm at 5V. The component supports a wide operating temperature range from -55°C to 150°C.
PackageWMini8-F1
MountingSurface Mount
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Technical Specifications
Panasonic MTM684110L technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package/Case
WMini8-F1
Lead Shape
Flat
Pin Count
8
PCB
8
Package Length (mm)
2.9
Package Width (mm)
2.4
Package Height (mm)
0.83(Max)
Seated Plane Height (mm)
0.8
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
2
Maximum Drain Source Voltage
12V
Maximum Gate Source Voltage
±8V
Maximum Continuous Drain Current
4.8A
Material
Si
Maximum Gate Threshold Voltage
1V
Maximum Drain Source Resistance
32@5VmOhm
Typical Input Capacitance @ Vds
1400@10VpF
Maximum Power Dissipation
1000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
61058
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Datasheet
Panasonic MTM684110L Datasheet
Download the complete datasheet for Panasonic MTM684110L to view detailed technical specifications.
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