FPD7612-000

FPD7612-000

Qorvo, Inc
Grade Your BOM

Description:

Trans RF MOSFET 8V 0.075A

Introduction date:

Jan 4, 2008

Updated: +90 days


See moreRF FETs by Qorvo, Inc

Online version: https://www.datasheets.com/part-details/fpd7612-000-qorvo--inc-37944482

overviewOverview

Familiarize yourself with the fundamental general information, properties, and characteristics of the component, along with its compliance with industry standards and regulations.

LifeCycleinfo
EU RoHS
rohs yesYes
RoHS Version
2002/95/EC
ECCNinfo
5A991.g
Automotive
noNo
Supplier Cage Codeinfo
7AHC2
Schedule Binfo
8542330000
PPAP
noNo
Category Path
Semiconductor > Diodes, Transistors and Thyristors > FET Transistors > RF FETs

pdfDatasheet

Get a comprehensive understanding of the electronic component by downloading its datasheet. This PDF document includes all the necessary details, such as product overview, features, specifications, ratings, diagrams, applications, and more.

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packagePackage

The package information for the component gives important details about the product's size, weight, and packaging. This helps engineers determine if the product meets their requirements and expectations.

Package Family Name
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Supplier Package
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Package Description
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Pin Count
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PCB
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Tabinfo
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Package Length (mm)info
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Package Width (mm)info
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Package Height (mm)info
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Package Diameter (mm)
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Mounting
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Package Outline
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Jedec
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parametricParametric

The parametric information displays vital features and performance metrics of the component, which helps engineers and supply chain managers to compare and choose the most appropriate electronic component for their applications and needs.

Product Line
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Maximum Forward Transconductance
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Minimum Forward Transconductance
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Minimum IDSS
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ID For GFS
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VDS For GFS
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Maximum Input Capacitance @ Vds
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Typical IDSS
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Typical Gate Threshold Voltage
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Breakdown Voltage Type
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Minimum Gate Threshold Voltage
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Type
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Typical Power 1dB Compression
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Typical Gate Charge @ 10V
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Typical Drain Efficiency
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Maximum Noise Figure
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Maximum Gate Source Voltage
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Maximum Drain Source Resistance
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Supplier Temperature Grade
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Process Technology
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Maximum Gate Source Leakage Current
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Maximum Gate Threshold Voltage
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Material
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Maximum Duty Cycle
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Typical Forward Transconductance
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Typical Output Capacitance @ Vds
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Typical Reverse Transfer Capacitance @ Vds
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Types of Output Stages
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Typical Power Gain @ Vds
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Maximum VSWR
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Typical Gate Charge @ Vgs
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Typical Fall Time
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Typical Rise Time
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Typical Turn-Off Delay Time
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Typical Turn-On Delay Time
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Minimum Storage Temperature
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Maximum Storage Temperature
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Channel Type
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Configuration
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Channel Mode
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Number of Elements per Chip
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Maximum Drain Source Voltage
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Maximum Continuous Drain Current
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Minimum Frequency
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Maximum Frequency
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Maximum Power Dissipation
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Mode of Operation
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Typical Power Gain
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Output Power
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Maximum IDSS
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Typical Input Capacitance @ Vds
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Minimum Operating Temperature
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Maximum Operating Temperature
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