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K4B2G0446C-HCF8

K4B2G0446C-HCF8Samsung Electronics


Description:

DRAM Chip DDR3 SDRAM 2Gbit 512Mx4 1.5V

Introduction date:

Dec 17, 2009

Updated: +90 days


See moreDRAM Chip by Samsung Electronics

Online version: https://www.datasheets.com/part-details/k4b2g0446c-hcf8-samsung-electronics-42408507

overviewOverview

Familiarize yourself with the fundamental general information, properties, and characteristics of the component, along with its compliance with industry standards and regulations.

LifeCycleinfo
ECCNinfo
EAR99
Automotive
noNo
Supplier Cage Codeinfo
1542F
HTSUSAinfo
8542320036
Schedule Binfo
8542320023
RadHardinfo
noNo
Dose Level
N/A
Category Path
Semiconductor > Memory > Memory Chips > DRAM Chip

pdfDatasheet

Get a comprehensive understanding of the electronic component by downloading its datasheet. This PDF document includes all the necessary details, such as product overview, features, specifications, ratings, diagrams, applications, and more.

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parametricParametric

The parametric information displays vital features and performance metrics of the component, which helps engineers and supply chain managers to compare and choose the most appropriate electronic component for their applications and needs.

Product Line
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Minimum Storage Temperature
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Operating Supply Voltage
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Number of I/O Lines
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Number of Bits per Word
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Supplier Temperature Grade
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Process Technology
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Refresh Cycles
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Maximum Refresh Cycle Time
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Maximum Storage Temperature
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Density
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Type
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Interface Type
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Organization
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Maximum Clock Rate
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Maximum Access Time
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Number of Internal Banks
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Number of Words per Bank
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Typical Operating Supply Voltage
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Minimum Operating Supply Voltage
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Maximum Operating Supply Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Data Bus Width
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Address Bus Width
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Maximum Operating Current
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Density in Bits
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K4B2G0446C-HCF8

K4B2G0446C-HCF8By Samsung Electronics