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RN1116MFV(TL3,T)

RN1116MFV(TL3,T)

Toshiba

Description:

TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

Country of Origin:

Japan

Updated: +90 days


See moreDigital BJT - Pre-Biased by Toshiba

Online version: https://www.datasheets.com/part-details/rn1116mfv-tl3-t--toshiba-66956599

overviewOverview

Familiarize yourself with the fundamental general information, properties, and characteristics of the component, along with its compliance with industry standards and regulations.

LifeCycleinfo
EU RoHS
rohs yesYes
RoHS Version
2011/65/EU, 2015/863
Automotive
rohs unknownUnknown
Supplier Cage Codeinfo
J2925
AEC Qualified
rohs unknownUnknown
Category Path
Semiconductor > Diodes, Transistors and Thyristors > Bipolar Transistors > Digital BJT - Pre-Biased

pdfDatasheet

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Datasheet Preview

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packagePackage

The package information for the component gives important details about the product's size, weight, and packaging. This helps engineers determine if the product meets their requirements and expectations.

Supplier Package
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Pin Count
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PCB
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Tabinfo
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Package Length (mm)info
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Package Width (mm)info
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Package Height (mm)info
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Seated Plane Height (mm)info
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Pin Pitch (mm)info
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Package Diameter (mm)
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Mounting
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Package Outline
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CADsCAD Models

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RN1116MFV(TL3,T)

RN1116MFV(TL3,T)By Toshiba