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Technical Specifications
Renesas 4AM11 technical specifications.
General
Drain Current-Max (ID)
5A
Drain-source On Resistance-Max
240mR
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Number of Elements
4
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
IN-LINEMeter
Polarity/Channel Type
N-CHANNEL, P-CHANNEL
Pulsed Drain Current-Max (IDM)
20A
Qualification Status
Not Qualified
Surface Mount
No
Terminal Form
Through Hole
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Not Compliant
Datasheet
Renesas 4AM11 Datasheet
Download the complete datasheet for Renesas 4AM11 to view detailed technical specifications.
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