FB1F3P-T1B-A

ON-CHIP RESISTOR NPN SILICON EPITAXIAL TRANSISTOR FOR MID-SPEED SWITCHING

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Renesas FB1F3P-T1B-A technical specifications.

DC Current Gain-Min (hFE)

135

JESD-609 Code

Max Collector Current

700mA

Number of Elements

Polarity/Channel Type

NPN

Power Dissipation-Max (Abs)

200mW

Reach SVHC Compliant

Yes

RoHS Compliant

Yes

Surface Mount

Yes

Terminal Finish

Tin

Transistor Element Material

SILICON

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.