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Technical Specifications
Renesas FN1L3N-T2B technical specifications.
General
| DC Current Gain-Min (hFE) | 35 |
| Max Collector Current | 100mA |
| Number of Elements | 1 |
| Polarity/Channel Type | PNP |
| Power Dissipation-Max (Abs) | 200mW |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas FN1L3N-T2B Datasheet
Download the complete datasheet for Renesas FN1L3N-T2B to view detailed technical specifications.
No datasheet is available for this part.