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Technical Specifications
Renesas FX20ASJ-06-T13 technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (ID)
20A
Drain-source On Resistance-Max
166mR
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Pulsed Drain Current-Max (IDM)
80A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Not Compliant
Datasheet
Renesas FX20ASJ-06-T13 Datasheet
Download the complete datasheet for Renesas FX20ASJ-06-T13 to view detailed technical specifications.
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