The HD2A4M is a single NPN transistor with a maximum collector-emitter voltage of 70V and a minimum DC current gain of 200. It has a maximum collector current of 1A and a maximum power dissipation of 2W. The transistor is packaged in a SMALL OUTLINEMeter style with a plastic body and a flat terminal form. It is rated for operation up to 150°C and has a moisture sensitivity level of 1. The HD2A4M is not RoHS compliant and is not qualified.
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Technical Specifications
Renesas HD2A4M technical specifications.
General
| Case Connection | COLLECTOR |
| Collector-emitter Voltage-Max | 70V |
| DC Current Gain-Min (hFE) | 200 |
| JESD-30 Code | R-PSSO-F3 |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 225°C |
| Polarity/Channel Type | NPN |
| Power Dissipation-Max (Abs) | 2W |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Form | Flat |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas HD2A4M Datasheet
Download the complete datasheet for Renesas HD2A4M to view detailed technical specifications.
No datasheet is available for this part.