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Technical Specifications
Renesas NE552R679A technical specifications.
General
| Case Connection | SOURCE |
| Drain Current-Max (ID) | 500mA |
| DS Breakdown Voltage-Min | 6V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| JESD-609 Code | e0 |
| Number of Elements | 1 |
| Package Shape | Rectangular |
| Package Style | MICROWAVEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Flat |
| Terminal Position | QUAD |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas NE552R679A Datasheet
Download the complete datasheet for Renesas NE552R679A to view detailed technical specifications.
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