The NE76084-T1 is a single N-channel GaAs FET from Renesas with a minimum breakdown voltage of 5V and maximum drain current of 50mA. It operates at a maximum temperature of 175°C and has a maximum power dissipation of 240mW. The device is packaged in a disk button meter style with a round shape and radial terminal form. It is suitable for use in amplifier applications and is surface mountable.
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Technical Specifications
Renesas NE76084-T1 technical specifications.
General
| Drain Current-Max (ID) | 50mA |
| DS Breakdown Voltage-Min | 5V |
| FET Technology | METAL SEMICONDUCTOR |
| Highest Frequency Band | KU BAND |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Package Shape | Round |
| Package Style | DISK BUTTONMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 240mW |
| Surface Mount | Yes |
| Terminal Form | Flat |
| Terminal Position | RADIAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | GALLIUM ARSENIDE |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas NE76084-T1 Datasheet
Download the complete datasheet for Renesas NE76084-T1 to view detailed technical specifications.
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