The NE85630-T1-R25 is a single NPN transistor with a collector base voltage rating of 20V, collector emitter voltage rating of 12V, and emitter base voltage rating of 3V. It operates at frequencies up to 4.5GHz and can handle a maximum power dissipation of 150mW. The device is packaged in a surface mount SOT-323 package and is available on tape and reel. The operating temperature range is from -65°C to 150°C.
Renesas NE85630-T1-R25 technical specifications.
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Voltage (VCEO) | 12V |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 4.5GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| RoHS | Not Compliant |
Download the complete datasheet for Renesas NE85630-T1-R25 to view detailed technical specifications.
No datasheet is available for this part.