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Technical Specifications
Renesas NE85633-T1B-A technical specifications.
General
| Collector-base Capacitance-Max | 1pF |
| Collector-emitter Voltage-Max | 12V |
| DC Current Gain-Min (hFE) | 50 |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e6 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | NPN |
| Power Dissipation Ambient-Max | 200mW |
| Power Dissipation-Max (Abs) | 200mW |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 7GHz |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NE85633-T1B-A Datasheet
Download the complete datasheet for Renesas NE85633-T1B-A to view detailed technical specifications.
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