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Technical Specifications
Renesas NP36N055SLE-E1-AY technical specifications.
General
Avalanche Energy Rating (Eas)
108mJ
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
36A
Drain Current-Max (ID)
36A
Drain-source On Resistance-Max
18mR
DS Breakdown Voltage-Min
55V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
120W
Pulsed Drain Current-Max (IDM)
144A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP36N055SLE-E1-AY Datasheet
Download the complete datasheet for Renesas NP36N055SLE-E1-AY to view detailed technical specifications.
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