MQW-LD laser diode emitting at 1580 nm with 10 mW maximum optical output power. Features a 4-pin CAN package with through-hole mounting, a metal construction, and dimensions of 5.6 mm diameter and 5.07 mm height. Operates within a temperature range of -40 °C to 85 °C, with a maximum output current of 150 mA and a typical threshold current of 20 mA. Includes a photodiode with a reverse voltage rating of 15 V and a laser reverse voltage of 2 V. Rise and fall times are a maximum of 0.7 ns.
PackageCAN
MountingThrough Hole
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Technical Specifications
Renesas NX5522EK technical specifications.
General
Package/Case
CAN
Pin Count
4
PCB
4
Package Height (mm)
5.07
Package Diameter (mm)
5.6
Package Material
Metal
Mounting
Through Hole
Maximum Optical Output Power
10mW
Type
MQW-LD
Peak Wavelength
1580nm
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Half Intensity Angle Parallel
11(Typ)°
Half Intensity Angle Perpendicular
11(Typ)°
Laser Reverse Voltage
2V
Maximum Output Current
150mA
Maximum Dark Current
10nA
Maximum Fall Time
0.7ns
Maximum Operating Current
10mA
Maximum Rise Time
0.7ns
Maximum Single Supply Voltage
1.5V
Maximum Threshold Current
20mA
Photodiode Reverse Voltage
15V
Power Supply Type
Single
Typical Single Supply Voltage
1.1V
Compliance
Cage Code
SAN34
HTS Code
8541406050
Schedule B
8541406050
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Renesas NX5522EK Datasheet
Download the complete datasheet for Renesas NX5522EK to view detailed technical specifications.
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