Industrial-grade 4Mbit CMOS SRAM with 55ns maximum access time. This parallel memory features a 512K x 8 organization, offering 524,288 words. Packaged in a 32-lead TSOP2 (R-PDSO-G32) with a 1.27mm terminal pitch, it operates from 2.7V to 3.6V supply voltage. Suitable for surface mounting, this rectangular component measures 20.95mm in length and 10.16mm in width, with a seated height of 1.2mm. It operates across an industrial temperature range of -40°C to 85°C and is RoHS and SVHC compliant.
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Technical Specifications
Renesas R1LV0408DSB-5SI#B0 technical specifications.
General
Access Time-Max
55ns
Density
4194304b
Height - Seated (Max)
1.2mm
JESD-30 Code
R-PDSO-G32
Length
20.95mm
Max Operating Temperature
85°C
Memory Type
SRAM,
Memory Width
8
Min Operating Temperature
-40°C
Moisture Sensitivity Level
2
Number of Functions
1
Number of Words
524288
Number of Words Code
512K
Organization
512KX8
Package Body Material
Plastic
Package Code
TSOP2
Package Shape
Rectangular
Package Style
SMALL OUTLINE, THIN PROFILEMeter
Parallel/Serial
PARALLEL
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Supply Voltage-Nom (Vsup)
3V
Surface Mount
Yes
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Form
Gull Wing
Terminal Pitch
1.27mm
Terminal Position
DUAL
Width
10.16mm
Compliance
RoHS
Compliant
Datasheet
Renesas R1LV0408DSB-5SI#B0 Datasheet
Download the complete datasheet for Renesas R1LV0408DSB-5SI#B0 to view detailed technical specifications.
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