N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting. Features a 1200V maximum collector-emitter voltage and 50A maximum continuous collector current. This single-configuration IGBT offers 245000mW maximum power dissipation and a typical collector-emitter saturation voltage of 2.8V. Encased in a TO-3P package with 3 pins and a tab, it operates from -55°C to 150°C.
PackageTO-3P
MountingThrough Hole
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Technical Specifications
Renesas RJH1CV5DPK-00#T0 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-3P
Package/Case
TO-3P
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.6
Package Width (mm)
4.8
Package Height (mm)
18.9
Seated Plane Height (mm)
21.9
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
1200V
Maximum Gate Emitter Voltage
±30V
Maximum Continuous Collector Current
50A
Maximum Power Dissipation
245000mW
Typical Collector Emitter Saturation Voltage
2.8V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas RJH1CV5DPK-00#T0 Datasheet
Download the complete datasheet for Renesas RJH1CV5DPK-00#T0 to view detailed technical specifications.
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