N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 50A continuous drain current. This 8-pin WPAK surface-mount component offers a low 2.9mΩ drain-source resistance at 10V Vgs. Key specifications include a typical gate charge of 34nC at 4.5V and input capacitance of 5600pF at 10V Vds, with a maximum power dissipation of 50W. The compact WPAK package measures 5.1mm x 6.1mm x 0.8mm, designed for efficient thermal management.
Renesas RJK0391DPA-00-J53 technical specifications.
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