N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 42A continuous drain current. This surface-mount component utilizes a WPAK package with 8 pins, measuring 5.1mm x 6.1mm x 0.8mm (Max). Key electrical characteristics include a maximum drain-source on-resistance of 3.8 mOhm at 10V, typical gate charge of 17 nC at 4.5V, and typical input capacitance of 2400 pF at 10V. Maximum power dissipation reaches 45000 mW, with an operating temperature range of -55°C to 150°C.
Renesas RJK03A4DPA-00-J53 technical specifications.
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