N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 42A continuous drain current. This surface-mount component utilizes a WPAK package with 8 pins, measuring 5.1mm x 6.1mm x 0.8mm (Max). Key electrical characteristics include a maximum drain-source on-resistance of 3.8 mOhm at 10V, typical gate charge of 17 nC at 4.5V, and typical input capacitance of 2400 pF at 10V. Maximum power dissipation reaches 45000 mW, with an operating temperature range of -55°C to 150°C.
PackageWPAK
MountingSurface Mount
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Technical Specifications
Renesas RJK03A4DPA-00-J53 technical specifications.
General
Package/Case
WPAK
Pin Count
8
PCB
8
Package Length (mm)
5.1
Package Width (mm)
6.1
Package Height (mm)
0.8(Max)
Seated Plane Height (mm)
0.8(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
42A
Material
Si
Maximum Drain Source Resistance
3.8@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
2400@10VpF
Maximum Power Dissipation
45000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Renesas RJK03A4DPA-00-J53 Datasheet
Download the complete datasheet for Renesas RJK03A4DPA-00-J53 to view detailed technical specifications.
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