N-channel enhancement mode silicon power MOSFET in an 8-pin WPAK(3) surface-mount package. Features a maximum drain-source voltage of 30V and a continuous drain current of 40A. Offers a low drain-source on-resistance of 4 mOhm at 8V Vgs. Designed with a single quad drain triple source configuration and a typical gate charge of 27.2 nC at 4.5V Vgs. Operating temperature range from -55°C to 150°C.
PackageWPAK(3)
MountingSurface Mount
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Technical Specifications
Renesas RJK03N2DPA-00-J5A technical specifications.
General
Package/Case
WPAK(3)
Pin Count
8
PCB
8
Package Length (mm)
5.1
Package Width (mm)
6.1
Package Height (mm)
0.85(Max)
Seated Plane Height (mm)
0.85(Max)
Pin Pitch (mm)
1.27
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±12V
Maximum Continuous Drain Current
40A
Material
Si
Maximum Drain Source Resistance
4@8VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
3350@10VpF
Maximum Power Dissipation
35000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Datasheet
Renesas RJK03N2DPA-00-J5A Datasheet
Download the complete datasheet for Renesas RJK03N2DPA-00-J5A to view detailed technical specifications.
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