
N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 45A continuous drain current. This single-element silicon transistor is housed in an 8-pin WPAK(3) surface-mount package with a 1.27mm pin pitch. Key specifications include a maximum drain-source on-resistance of 2.4 mOhm at 10V, typical gate charge of 29.4 nC at 4.5V, and a maximum power dissipation of 45000 mW. Operating temperature range spans from -55°C to 150°C.
Renesas RJK03N4DPA-00-J5A technical specifications.
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