N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 45A continuous drain current. This single-element silicon transistor is housed in an 8-pin WPAK(3) surface-mount package with a 1.27mm pin pitch. Key specifications include a maximum drain-source on-resistance of 2.4 mOhm at 10V, typical gate charge of 29.4 nC at 4.5V, and a maximum power dissipation of 45000 mW. Operating temperature range spans from -55°C to 150°C.
PackageWPAK(3)
MountingSurface Mount
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Technical Specifications
Renesas RJK03N4DPA-00-J5A technical specifications.
General
Package/Case
WPAK(3)
Pin Count
8
PCB
8
Package Length (mm)
5.1
Package Width (mm)
6.1
Package Height (mm)
0.85(Max)
Seated Plane Height (mm)
0.85(Max)
Pin Pitch (mm)
1.27
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
45A
Material
Si
Maximum Drain Source Resistance
2.4@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
3780@10VpF
Maximum Power Dissipation
45000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Datasheet
Renesas RJK03N4DPA-00-J5A Datasheet
Download the complete datasheet for Renesas RJK03N4DPA-00-J5A to view detailed technical specifications.
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