The uPA1501H is a N-channel metal-oxide semiconductor field-effect transistor with a maximum drain current of 3A and a maximum drain-source on resistance of 650mR. It has a minimum breakdown voltage of 120V and a maximum power dissipation of 4W. The device is packaged in a rectangular IN-LINEMeter style with a plastic body and tin terminals. It is not qualified and is not RoHS compliant. The uPA1501H is designed for switching applications and has a maximum operating temperature of 150°C.
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Technical Specifications
Renesas uPA1501H technical specifications.
General
| Drain Current-Max (Abs) (ID) | 3A |
| Drain Current-Max (ID) | 3A |
| Drain-source On Resistance-Max | 650mR |
| DS Breakdown Voltage-Min | 120V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e0 |
| Max Operating Temperature | 150°C |
| Number of Elements | 4 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | IN-LINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 4W |
| Pulsed Drain Current-Max (IDM) | 12A |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Surface Mount | No |
| Terminal Finish | Tin |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas uPA1501H Datasheet
Download the complete datasheet for Renesas uPA1501H to view detailed technical specifications.
No datasheet is available for this part.