The uPA1600GS is an N-channel metal-oxide semiconductor FET from Renesas with a maximum drain current of 500mA and a maximum drain-source on resistance of 4 ohms. It has a minimum breakdown voltage of 30V and is suitable for switching applications. The device is packaged in a small outline rectangular plastic package with a gull wing terminal form and a dual terminal position. It is not qualified and not RoHS compliant. The uPA1600GS is suitable for surface mount applications and has a terminal finish of tin.
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Technical Specifications
Renesas uPA1600GS technical specifications.
General
| Drain Current-Max (ID) | 500mA |
| Drain-source On Resistance-Max | 4R |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G20 |
| JESD-609 Code | e0 |
| Number of Elements | 8 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas uPA1600GS Datasheet
Download the complete datasheet for Renesas uPA1600GS to view detailed technical specifications.
No datasheet is available for this part.