The UPA1600GS-A is an N-channel metal-oxide semiconductor field-effect transistor (MOSFET) with a maximum drain current of 500mA and a maximum drain-source on resistance of 4 ohms. It has a minimum breakdown voltage of 30 volts and is available in an 8-element package. The device is suitable for switching applications and is qualified to the JESD-30 and JESD-609 standards. It is also compliant with the Restriction of Hazardous Substances (RoHS) directive and is suitable for surface mount technology (SMT). The UPA1600GS-A has a peak reflow temperature of 260°C and a maximum time at this temperature of 10 seconds.
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Technical Specifications
Renesas UPA1600GS-A technical specifications.
General
| Drain Current-Max (ID) | 500mA |
| Drain-source On Resistance-Max | 4R |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G20 |
| JESD-609 Code | e6 |
| Number of Elements | 8 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity/Channel Type | N-CHANNEL |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Time @ Peak Reflow Temperature-Max (s) | 10s |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA1600GS-A Datasheet
Download the complete datasheet for Renesas UPA1600GS-A to view detailed technical specifications.
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