UPA1807GR-9JG-E1-A

N-Channel Mos Field Effect Transistor For Switching

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Renesas UPA1807GR-9JG-E1-A technical specifications.

Drain Current-Max (Abs) (ID)

12A

Drain Current-Max (ID)

12A

FET Technology

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code

Max Operating Temperature

150°C

Number of Elements

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

RoHS Compliant

Yes

Surface Mount

Yes

Terminal Finish

Tin

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.