The UPA1911ATE-T1 is a P-channel enhancement MOSFET with a maximum drain source voltage of 20V and maximum continuous drain current of 2.5A. It has a typical RDS-on of 115mOhm at 4.5V and can operate over an extended temperature range of -55 to 150°C. The device is suitable for surface mount applications and is categorized as a MOSFET.
Package6SC-95
Temp Range-55 to 150 °C
MountingSurface Mount
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Technical Specifications
Renesas UPA1911ATE-T1 technical specifications.
General
| Rad Hard | No |
| Package | 6SC-95 |
| Channel Type | P |
| Channel Mode | Enhancement |
| Maximum Drain Source Voltage | 20 V |
| Maximum Continuous Drain Current | 2.5 A |
| RDS-on | [email protected] mOhm |
| Maximum Gate Source Voltage | ±12 V |
| Typical Turn-On Delay Time | 130 ns |
| Typical Rise Time | 230 ns |
| Typical Turn-Off Delay Time | 470 ns |
| Typical Fall Time | 380 ns |
| Operating Temperature | -55 to 150 °C |
| Mounting | Surface Mount |
| Category | MOSFET |
| Manufacturer | Renesas Electronics |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas UPA1911ATE-T1 Datasheet
Download the complete datasheet for Renesas UPA1911ATE-T1 to view detailed technical specifications.
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