Renesas
uPA1914TE
P-Channel Metal-Oxide Semiconductor FET, 30V, 4.5A, 96mR, 2W, 150°C, Plastic, Small Outline
The uPA1914TE is a single P-channel metal-oxide semiconductor field-effect transistor (FET) from Renesas. It has a maximum drain current of 4.5A and a minimum breakdown voltage of 30V. The FET's on-resistance is maximally 96 milliohms, and it can dissipate up to 2 watts of power. The device is rated for operation at temperatures up to 150°C. The uPA1914TE is available in a plastic small outline package with a gull-wing terminal form and is suitable for switching applications.
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Technical Specifications
Renesas uPA1914TE technical specifications.
General
| Drain Current-Max (Abs) (ID) | 4.5A |
| Drain Current-Max (ID) | 4.5A |
| Drain-source On Resistance-Max | 96mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G6 |
| JESD-609 Code | e0 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 2W |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas uPA1914TE Datasheet
Download the complete datasheet for Renesas uPA1914TE to view detailed technical specifications.
No datasheet is available for this part.