Renesas UPA1952TE-T1 technical specifications.
| Rad Hard | No |
| Package | 6SC-95 |
| Channel Type | P |
| Channel Mode | Enhancement |
| Maximum Drain Source Voltage | 20 V |
| Maximum Continuous Drain Current | 2 A |
| RDS-on | [email protected] mOhm |
| Maximum Gate Source Voltage | ±8 V |
| Typical Turn-On Delay Time | 29 ns |
| Typical Rise Time | 120 ns |
| Typical Turn-Off Delay Time | 145 ns |
| Typical Fall Time | 148 ns |
| Operating Temperature | -55 to 150 °C |
| Mounting | Surface Mount |
| Category | MOSFET |
| Manufacturer | Renesas Electronics |
| RoHS | Not Compliant |
Download the complete datasheet for Renesas UPA1952TE-T1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.