The UPA1952TE-T1-A is a P-channel metal-oxide semiconductor field-effect transistor with a maximum drain current of 2A and a maximum operating temperature of 150°C. It has a maximum power dissipation of 1.15W and is compliant with RoHS regulations. The device is designed for surface mount applications and features a tin terminal finish.
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Technical Specifications
Renesas UPA1952TE-T1-A technical specifications.
General
| Drain Current-Max (Abs) (ID) | 2A |
| Drain Current-Max (ID) | 2A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e6 |
| Max Operating Temperature | 150°C |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 1.15W |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA1952TE-T1-A Datasheet
Download the complete datasheet for Renesas UPA1952TE-T1-A to view detailed technical specifications.
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