The uPA1970TE is a surface mount N-channel metal-oxide semiconductor FET from Renesas. It can handle a maximum drain current of 2.2A and a maximum power dissipation of 1.15W. The device operates within a temperature range of -40°C to 150°C. It is not RoHS compliant.
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Technical Specifications
Renesas uPA1970TE technical specifications.
General
| Drain Current-Max (Abs) (ID) | 2.2A |
| Drain Current-Max (ID) | 2.2A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e0 |
| Max Operating Temperature | 150°C |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 1.15W |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Finish | Tin |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas uPA1970TE Datasheet
Download the complete datasheet for Renesas uPA1970TE to view detailed technical specifications.
No datasheet is available for this part.