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Technical Specifications
Renesas UPA2350T1G-E4-A technical specifications.
General
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e6
Max Operating Temperature
150°C
Number of Elements
2
Package Shape
Square
Package Style
GRID ARRAYMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
1.3W
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Ball
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas UPA2350T1G-E4-A Datasheet
Download the complete datasheet for Renesas UPA2350T1G-E4-A to view detailed technical specifications.
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