The UPA2350T1G-E4-A is a dual N-channel metal-oxide semiconductor switch from Renesas. It features a maximum operating temperature of 150°C and a maximum power dissipation of 1.3W. This device is suitable for switching applications and is available in a grid array package. The UPA2350T1G-E4-A is compliant with RoHS regulations and is suitable for surface mount applications.
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Technical Specifications
Renesas UPA2350T1G-E4-A technical specifications.
General
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e6 |
| Max Operating Temperature | 150°C |
| Number of Elements | 2 |
| Package Shape | Square |
| Package Style | GRID ARRAYMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 1.3W |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Ball |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA2350T1G-E4-A Datasheet
Download the complete datasheet for Renesas UPA2350T1G-E4-A to view detailed technical specifications.
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