Quick Jump:
Technical Specifications
Renesas UPA2732UT1A-E1-AZ technical specifications.
General
Avalanche Energy Rating (Eas)
40mJ
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
40A
Drain Current-Max (ID)
40A
Drain-source On Resistance-Max
6.7mR
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e6
Max Operating Temperature
150°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
4.6W
Pulsed Drain Current-Max (IDM)
160A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Flat
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas UPA2732UT1A-E1-AZ Datasheet
Download the complete datasheet for Renesas UPA2732UT1A-E1-AZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.