The UPA810T-T1 is a dual NPN transistor from Renesas, featuring a maximum collector current of 100mA and a maximum collector-emitter voltage of 12V. It operates in the ultra high frequency band with a transition frequency of 4.5GHz. The device is packaged in a small outline package made of plastic, with a gull wing terminal form and dual terminal position. It is suitable for amplifier applications and has a maximum operating temperature of 150°C.
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Technical Specifications
Renesas UPA810T-T1 technical specifications.
General
| Additional Feature | LOW NOISE |
| Collector-base Capacitance-Max | 1.5pF |
| Collector-emitter Voltage-Max | 12V |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 Code | R-PDSO-G6 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Number of Elements | 2 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | NPN |
| Qualification Status | Not Qualified |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 4.5GHz |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas UPA810T-T1 Datasheet
Download the complete datasheet for Renesas UPA810T-T1 to view detailed technical specifications.
No datasheet is available for this part.