RF Micro Devices
FPD2250SOT89E
RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-3
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Technical Specifications
RF Micro Devices FPD2250SOT89E technical specifications.
General
Max Operating Temperature
175
Number of Terminals
3
Terminal Position
SINGLE
Pin Count
3
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
unknown
Military Spec
False
Datasheet
RF Micro Devices FPD2250SOT89E Datasheet
Download the complete datasheet for RF Micro Devices FPD2250SOT89E to view detailed technical specifications.
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