RF Micro Devices
FPD3000SOT89E
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-3
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Technical Specifications
RF Micro Devices FPD3000SOT89E technical specifications.
General
Max Operating Temperature
175
Number of Terminals
3
Terminal Position
SINGLE
Pin Count
3
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
5A991.G
HTS Code
8541.21.00.95
REACH
unknown
Military Spec
False
Datasheet
RF Micro Devices FPD3000SOT89E Datasheet
Download the complete datasheet for RF Micro Devices FPD3000SOT89E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.