The FDA18N50 is a 500V N-Channel Power MOSFET with a continuous drain current of 19A and a drain to source breakdown voltage of 500V. It has a drain to source resistance of 265mR and a gate to source voltage of 30V. The device is lead free and packaged in rail or tube packaging. It has a power dissipation of 239W and is compliant with Reach SVHC regulations.
Power239W
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Technical Specifications
Rochester Electronics FDA18N50 technical specifications.
General
| Continuous Drain Current (ID) | 19A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 265mR |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.86nF |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Power Dissipation | 239W |
| Reach SVHC Compliant | Yes |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDA18N50 Datasheet
Download the complete datasheet for Rochester Electronics FDA18N50 to view detailed technical specifications.
No datasheet is available for this part.