The FDB050AN06A0 is a power MOSFET from Rochester Electronics with a maximum continuous drain current of 80A and a drain-to-source breakdown voltage of 60V. It has a power dissipation of 245W and is packaged in a TO-263 case. The device is lead-free and available in bulk packaging. It can handle a gate-to-source voltage of up to 20V and has an input capacitance of 3.9nF.
PackageTO-263
Current Rating80A
Power245W
Quick Jump:
Technical Specifications
Rochester Electronics FDB050AN06A0 technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 4.3mR |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.9nF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 245W |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDB050AN06A0 Datasheet
Download the complete datasheet for Rochester Electronics FDB050AN06A0 to view detailed technical specifications.
No datasheet is available for this part.