The FDB8870 is a 30V power MOSFET with a continuous drain current of 35A and a power dissipation of 160W. It is packaged in a TO-263 case and is available in lead-free packaging. The device has a drain to source breakdown voltage of 30V and a drain to source resistance of 3.9mR. It can handle a gate to source voltage of up to 20V.
PackageTO-263
Current Rating160A
Power160W
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Technical Specifications
Rochester Electronics FDB8870 technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 35A |
| Current Rating | 160A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Power Dissipation | 160W |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDB8870 Datasheet
Download the complete datasheet for Rochester Electronics FDB8870 to view detailed technical specifications.
No datasheet is available for this part.