The FDB8896 is a power MOSFET with a continuous drain current rating of 93A and a drain to source breakdown voltage of 30V. It features a low drain to source resistance of 5.7mR and a power dissipation of 80W. The device is packaged in a TO-263 case and is available on tape and reel. It is compliant with lead-free requirements and RoHS. The FDB8896 is suitable for high-current applications in a variety of industries.
PackageTO-263
Current Rating93A
Power80W
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Technical Specifications
Rochester Electronics FDB8896 technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 93A |
| Current Rating | 93A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.62nF |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 80W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDB8896 Datasheet
Download the complete datasheet for Rochester Electronics FDB8896 to view detailed technical specifications.
No datasheet is available for this part.