This power MOSFET features a continuous drain current of 2.3A and a drain to source breakdown voltage of 20V. It has a drain to source resistance of 115 milliohms and a power dissipation of 960 milliwatts. The device is packaged in bulk and is lead-free compliant. It is also compliant with Reach SVHC regulations.
Current Rating-2.3A
Power960mW
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Technical Specifications
Rochester Electronics FDC6312P technical specifications.
General
| Continuous Drain Current (ID) | 2.3A |
| Current Rating | -2.3A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 115mR |
| Drain to Source Voltage (Vdss) | -20V |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 467pF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 960mW |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDC6312P Datasheet
Download the complete datasheet for Rochester Electronics FDC6312P to view detailed technical specifications.
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